| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| THN405Z |
SiGe NPN Transistor
|
AUK corp
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| THN5601B |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| THN5601SF |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| THN6701B |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| THN5602F |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| THN6501 |
NPN SiGe RF TRANSISTOR npn型硅锗射频晶体管
|
Tachyonics Co,. Ltd.
|
| NESG3031M14-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2101M16-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2021M16-T3-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Micro Devices Corporation
|
